Latch-up free vertical TVS diode array structure using trench isolation

ABSTRACT

A method for manufacturing a transient voltage suppressing (TVS) array substantially following a manufacturing process for manufacturing a vertical semiconductor power device. The method includes a step of opening a plurality of isolation trenches in an epitaxial layer of a first conductivity type in a semiconductor substrate followed by applying a body mask for doping a body region having a second conductivity type between two of the isolation trenches. The method further includes a step of applying an source mask for implanting a plurality of doped regions of the first conductivity type constituting a plurality of diodes wherein the isolation trenches isolating and preventing parasitic PNP or NPN transistor due to a latch-up between the doped regions of different conductivity types.

This Patent Application is a Continuation in Part (CIP) Application of aco-pending application with a Ser. No. 11/056,345 filed by a commonInventor of this Application on Feb. 11, 2005. This Patent Applicationis also a Continuation in Part (CIP) Application of a co-pendingApplication with a Ser. No. 11/600,696 filed by a common Inventor ofthis Application on Nov. 16,2006. The Disclosures made in these twoApplications are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates generally to a circuit configuration and method ofmanufacturing a transient voltage suppressor (TVS). More particularly,this invention relates to an improved circuit configuration and methodof manufacturing vertical TVS array implemented with trench isolationfor resolving a technical difficulty of latch-up.

2. Description of the Relevant Art

The conventional technologies for designing and manufacturing atransient voltage suppressor (TVS) array is still confronted with atechnical difficulty that the in a TVS array wherein multiple PNjunctions diodes are manufactured in a semiconductor substrate byapplying a standard COMS processing steps, there are inherent PNP andNPN parasitic transistors. In an ESD event or the occurrence of atransient voltage, with a larger voltage applied to this TVS array, theparasitic NPN or PNP transistors are turned on and latched up, thuscausing a sudden and strong voltage snap back. The sudden and largesnapback may cause the undesirable effects of system instability or evendamages. Additionally, the latch-up of the parasitic NPN or PNPtransistors in the TVS array may further lead to other unexpected orundesirable voltage-current transient conditions. The technicaldifficulties caused by the parasitic PNP or NPN latch-up in the TVSarray cannot be easily resolved.

Specifically, the transient voltage suppressors (TVS) are commonlyapplied for protecting integrated circuits from damages due to theinadvertent occurrence of an over voltage imposed onto the integratedcircuit. An integrated circuit is designed to operate over a normalrange of voltages. However, in situations such as electrostaticdischarge (ESD), electrical fast transients and lightning, an unexpectedand an uncontrollable high voltage may accidentally strike onto thecircuit. The TVS devices are required to serve the protection functionsto circumvent the damages that are likely to occur to the integratedcircuits when such over voltage conditions occur. As increasing numberof devices are implemented with the integrated circuits that arevulnerable to over voltage damages, demands for TVS protection are alsoincreased. Exemplary applications of TVS can be found in the USB powerand data line protection, Digital video interface, high speed Ethernet,Notebook computers, monitors and flat panel displays.

FIGS. 1A and 1B show a circuit diagram and a current-voltage diagramrespectively of a TVS device. An idea TVS is to totally block thecurrent, i.e., zero current, when the input voltage Vin is less than thebreakdown voltage Vb for minimizing the leakage current. And, ideally,the TVS has close to zero resistance under the circumstance when theinput voltage Vin is greater than the breakdown voltage Vb such that thetransient voltage can be effectively clamped. A TVS can be implementedwith the PN junction device that has a breakdown voltage to allowcurrent conduction when a transient input voltage exceeds the breakdownvoltage to achieve the transient voltage protection. However, the PNjunction type of TVS has no minority carriers and has a poor clampingperformance due to its high resistance as that shown in FIG. 1B. Thereare alternate TVS implementations with Bipolar NPN/PNP with anavalanche-triggered turning-on of the bipolar transistor. The base isflooded with minority carriers and the bipolar TVS can achieve betterclamping voltage as the avalanche current is amplified with the bipolargain.

With the advancement of electronic technologies, there are increasinglymore devices and applications that require TVS diode array for ESDprotection, particularly for protecting high bandwidth data buses.Referring to FIG. 2A for a circuit diagram of a four channel TVS andFIG. 2B for side cross sectional views of device implementation of theTVS array showing only the core of the array device. The TVS array asshown in FIGS. 2A and 2B includes a plurality of high-side and low-sidesteering diodes connect in series wherein the high-side steering diodesare connected to Vcc and the low-side steering diodes connected toground potential. Furthermore, these high-side and low-side steeringdiodes are connected in parallel to a main Zener diode wherein thesteering diodes are much smaller and having lower junction capacitance.Additionally, as shown in FIG. 2C, such implementation further generatesanother problem of latch-up due to the SCR action induced by parasiticPNP and NPN transistors. The main Zener diode breakdown triggers the NPNon which further turns on the SCR resulting latch-up. In hightemperature, the high leakage current through the NP junction of theparasitic NPN may also turn on the SCR leading to latch-up even thoughthe NPN is not turned on. To suppressed latch-up due to the SCR actioninduced by parasitic PNP and NPN transistors, the actual deviceimplementation on a semiconductor substrate requires a lateral extensionon the substrate of a distance that may be up to 100 micrometers or moreas shown in FIG. 2B and the suppression usually is not effective enough.

FIGS. 3A and 3B illustrate particular difficulty caused by latch-upthrough the parasitic PNP transistor in an Ethernet differentialprotection circuit. In this Ethernet protection circuit, both Vcc andground pins are floating. However, a parasitic SCR structure is notsufficiently weak in the design that causes a sudden voltage snap backas shown in FIG. 3B. Such sudden and strong snap back may causeundesirable effects of system instability or even damages. Thedifficulties cannot be easily resolved because the parasitic PNPtransistor is inherent in the standard CMOS process and the fact thatboth Vcc and ground pin floating deteriorates the effect of latech-up.Additional buried layers are required to suppress the gain of theparasitic PNP transistors that causes complicated device configurationsand high manufacturing costs.

Therefore, a need still exists in the fields of circuit design anddevice manufactures for providing a new and improved circuitconfiguration and manufacturing method to resolve the above-discusseddifficulties. Specifically, a need still exists to provide new andimproved TVS circuits that can effectively and conveniently prevent theparasitic PNP/NPN transistor latch-up.

SUMMARY OF THE PRESENT INVENTION

It is therefore an aspect of the present invention to provide a new andimproved device structure for a TVS array to implement latch-upisolation trenches to prevent the latch-up of the parasitic PNP-NPNtransistors such that the above-discussed difficulties and limitationsencountered by the conventional TVS array can be overcome.

Another aspect of the present invention to provide a TVS array thatimplemented with isolation trenches between diodes such that the lateraldistance between adjacent diodes can be reduced without the concerns oflatch-up.

Briefly in a preferred embodiment this invention discloses a TVS arraythat includes a plurality of diodes formed as dopant regions ofdifferent conductivity types for constituting PN junctions in asemiconductor substrate. The TVS array further includes an isolationtrench between the dopant regions for isolating and preventing latch-upof a parasitic PNP or NPN transistor.

The present invention further discloses a method for manufacturing anelectronic device with an integrated transient voltage-suppressing (TVS)array. The method includes a step of manufacturing the TVS array in asemiconductor substrate by doping a plurality of dopant regions ofdifferent conductivity types to form diodes between PN junctions betweenthese dopant regions. The method further includes a step of forming anisolation trench between the dopant regions for isolating and preventinga latch-up of a parasitic PNP or NPN transistor between the dopantregions of different conductivity types.

These and other objects and advantages of the present invention will nodoubt become obvious to those of ordinary skill in the art after havingread the following detailed description of the preferred embodiment,which is illustrated in the various drawing figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a circuit diagram for showing a conventional TVS device andFIG. 1B is an I-V diagram, i.e., a current versus voltage diagram, forillustrating the reverse characteristics of the TVS device.

FIG. 2A shows a circuit diagram of a TVS array comprising a plurality ofhigh side and low side diodes connected to a plurality of IO pads with amain Zener diode connected in parallel to the high side and low sidediodes.

FIGS. 2B is a side cross sectional view for illustrating deviceimplementation of the TVS array of FIG. 2A according to a conventionaldevice configuration.

FIG. 2C shows the equivalent circuit diagram for illustrating thepotential latch-up of device as implemented in FIGS. 2B FIG. 3A is acircuit diagram of an Ethernet differential protection circuit thatrequires both Vcc and GND pins to float and requires buried layers tosuppress gain of parasitic SCR with the protection circuit configuredaccording to structures shown in FIGS. 2B.

FIG. 3B shows an I-V diagram for illustrating an ESD protection or TVSoperation when a conventional TVS array is applied that leads to theoccurrence of an undesirable sudden and significant snap back.

FIG. 4 is a side cross sectional view of a TVS array implemented withisolation trenches of this invention that significantly reduced thelatch-up of the parasitic PNP or NPN transistors.

FIG. 5 is a side cross sectional view of another TVS array implementedwith isolation trenches of this invention that significantly reduced thelatch-up of the parasitic PNP or NPN transistors.

FIG. 6 is an I-V diagram for illustrating an operation of an ESDprotection or TVS operation with significantly reduced snap back becausethe latch-up is eliminated.

DETAILED DESCRIPTION OF THE METHOD

Referring to FIG. 4 for a side cross sectional view of a new andimproved implementation a part of TVS array of this invention. Thepartial TVS array 100 as shown with two channels is supported on a N-epilayer 105 on top of a N+ substrate 101 with the bottom surface connectedto an anode terminal 110 at a Vcc voltage. The TVS array is connectedbetween the anode 110 disposed at the bottom surface and a cathodeterminal 120 disposed at a top surface connected to a ground voltage.The TVS array 100 further includes a first high side diode 125 and afirst low side diode 130 connected to a first IO terminal 135. The TVSarray 100 further includes a second low side diode 140 and a second lowside diode 145 connected to a second 10 terminal 150. The first highside diode 125 is formed as a PN junction between the P+ doped region125-P and the N-epi 105. The first low side diode 130 is formed as a PNjunction between an N+ region 135-N and a P-body region 160 disposedbelow the cathode terminal 120 with the first IO pad 135 connected to N+dopant region 135-N of the first low side diode 130 and to the P+ dopantregion 125-P of the first high side diode 125. The second low side diode145 is formed as a PN junction between the N+ region 145-N and theP-body region 160 disposed below the cathode terminal 120 with thesecond IO pad 150 connected to N+ dopant region 145-N of the second lowside diode 145 and to the P+ dopant region 140-P of the second high sidediode 140. A Zener diode 170 of a greater area is formed with a PNjunction between the P-body 160 and the N-epi. A NPN transistor that canbe triggered on by Zener diode 170 is formed by N+ emitter region 155, Pbody region 160 and N+ substrate 101 to conduct large transient currentwithout much resistance. The TVS array 100 further includes a firstisolation trench 180-1 formed between the first high side diode 125 andfirst low side diode 130. The TVS array 100 further includes a secondisolation trench 180-2 formed between the second high side diode 140 andfirst low side diode 145. The isolation trenches prevent the latch-up ofthe parasitic NPN or PNP transistors that are inherently formed betweenmultiple PN junctions formed by the high side and low side diodes.

FIG. 5 is a side cross sectional view of new and improved implementationof another TVS array of this invention. The device 100′ in FIG. 5 issimilar to device 100 in FIG. 4 except that there are extra trenches indevice 100′ to provide better isolation. Trenches 180′-1 and 180′-2separate the low side diodes from the main Zener diode region thereforebreak down the lateral NPN configured by N+ region 155, P body 160 andlow side diode cathode regions 135-N and 145-N.

FIG. 6 is an I-V diagram for illustrating an operation of an ESDprotection or TVS operation with significantly reduced snap back becausethe latch-up is eliminated. As illustrated in the I-V diagram, the I-Vcurve 210 shows a sudden snap back due to the latch up of the parasiticNPN or PNP transistors that are likely to turn on with high voltage andcurrent between different doped regions in the substrate in a TVS array.With the isolation trenches 180-1 and 180-2, the latch-up is eliminatedand the snap back is greatly reduced. An I-V curve as shown in curve 210is achieved with unduly causing system instability due to sudden voltagevariations when a snap back occurs.

Although the present invention has been described in terms of thepresently preferred embodiment, it is to be understood that suchdisclosure is not to be interpreted as limiting. Various alterations andmodifications will no doubt become apparent to those skilled in the artafter reading the above disclosure. Accordingly, it is intended that theappended claims be interpreted as covering all alterations andmodifications as fall within the true spirit and scope of the invention.

1. A transient voltage suppressing (TVS) array comprising: a pluralityof diodes formed as dopant regions of different conductivity types forconstituting PN junctions in a semiconductor substrate; and an isolationtrench disposed between said diodes for isolating and preventing aparasitic PNP or NPN transistor to a latch-up between said doped regionsin said semiconductor substrate of different conductivity types.
 2. TheTVS array of claim 1 wherein: said PN junctions are formed as verticalPN junctions in said semiconductor substrate with electrodes of a firstand a second electrical conductivity types to connect respectively to ahigh and low voltages disposed separately on a top surface and a bottomsurface of said semiconductor substrate.
 3. The TVS array of claim 1further comprising: at least two vertically stacked PN junctionsdisposed between two of said isolation trenches having a greater lateralwidth in said semiconductor substrate for constituting a Zener diode. 4.The TVS array of claim 3 wherein: said Zener diode is further isolatedby two of isolation trenches disposed immediately next to and isolatingsaid Zener diode from another of said diodes of said TVS array wherebysaid latch-up is prevented.
 5. The TVS array of claim 1 furthercomprising: at least two input/output (I/O) contact pads, eachcontacting two PN junctions functioning respectively as a high-sidediode and a low-side diode and insulated by an isolation trench witheach of said I/O contact pads overlying an insulation layer coveringsaid isolation trench.
 6. The TVS array of claim 1 wherein: saidsemiconductor substrate further comprising a N-type substrate supportinga N-type epitaxial layer wherein said PN junctions are formed asvertical PN junctions in said semiconductor substrate with an anodeelectrode disposed on a bottom surface of said substrate for connectingto a high voltage and a cathode electrode disposed on a top surface ofsaid substrate for connecting to a low voltage.
 7. The TVS array ofclaim 6 wherein: said semiconductor substrate further comprising aP-body region disposed between two of said isolation trenches in saidN-type epitaxial layer wherein said body region further encompassing aZener N-doped region to form a vertically stacked PN junctionsconstituting a Zener diode between two of said isolation trenches. 8.The TVS array of claim 6 wherein: said semiconductor substrate furthercomprising a P-body region disposed between two of said isolationtrenches in said N-type epitaxial layer wherein said body region furtherencompassing a N-doped region to form a PN junction with said P-body tofunction as a low side diode of said TVS array
 9. A transient voltagesuppressing (TVS) array disposed on a semiconductor substrate supportingan epitaxial layer of a first conductivity type wherein said TVS arrayfurther comprising: a plurality of isolation trenches opened in saidepitaxial layer with a body region of a second conductivity type in saidepitaxial layer between two of said trenches; and a Zener doped regionin said body region of said first conductivity type for constituting aZener diode comprising vertically stacked PN junctions for carrying atransient current for suppressing a transient voltage.
 10. The TVS arrayof claim 9 wherein: said Zener diode is further isolated by two ofisolation trenches disposed immediately next to said Zener diode forisolating said Zener diode from another PN junction of said TVS arraywhereby a latch-up is prevented.
 11. The TVS array of claim 9 wherein:said body region further comprising a low-side diode doped region ofsaid first conductivity type for constituting a low side diode; and saidepitaxial layer further comprising a doped region of said secondconductivity type forming a PN junction with said epitaxial layer forconstituting a high-side diode for electrically connecting to saidlow-side diode through an input-output (I/O) contact pad.
 12. The TVSarray of claim 9 wherein: said epitaxial layer further comprisingvertical PN junctions constituting diodes therein and electricallyconnecting to electrodes of a first and a second electrical conductivitytypes for connecting respectively to a high and low voltages disposedseparately on a top surface and a bottom surface of said semiconductorsubstrate.
 13. The TVS array of claim 9 wherein: said semiconductorsubstrate further comprising a N-type substrate supporting a N-typeepitaxial layer to form a plurality of PN junctions in said N-typeepitaxial layer as vertical PN junctions in said semiconductor substratewith an anode electrode disposed on a bottom surface of said substratefor connecting to a high voltage and a cathode electrode disposed on atop surface of said substrate for connecting to a low voltage.
 14. TheTVS array of claim 13 wherein: said body region is a P-body regiondisposed between two of said isolation trenches in said N-type epitaxiallayer wherein said body region further encompassing a Zener N-dopedregion to form a vertically stacked PN junctions constituting a Zenerdiode between two of said isolation trenches.
 15. The TVS array of claim13 wherein: said body region is a P-body region disposed between two ofsaid isolation trenches in said N-type epitaxial layer wherein said bodyregion further encompassing a N-doped region to form a PN junction withsaid P-body to function as a low side diode of said TVS array
 16. Amethod for manufacturing a transient voltage suppressing (TVS) arraysubstantially following a manufacturing process for manufacturing avertical semiconductor power device, the method comprising: opening aplurality of isolation trenches in an epitaxial layer of a firstconductivity type in a semiconductor substrate followed by applying abody mask for doping a body region having a second conductivity typebetween two of said isolation trenches; and applying an source mask forimplanting a plurality of doped regions of said first conductivity typeconstituting a plurality of diodes wherein said isolation trenchesisolating and preventing parasitic PNP or NPN transistor due to alatch-up between said doped regions of different conductivity types. 17.The method of claim 16 further comprising: applying a contact mask forimplanting doped regions of said second conductivity type away from saidbody region for constituting high side diodes with said epitaxial layerto connect to said low side diodes encompassed in said body region withinput-output (IO) contact pads across said isolation trenches.
 18. Themethod of claim 16 wherein: said step implanting a plurality of dopedregions of said first conductivity type constituting a plurality ofdiodes in said step further comprising a step of forming a Zener dopedregion with a greater width wherein said Zener doped region comprisingvertically stacked PN junctions for functioning as a Zener diode withsaid body region in said epitaxial layer.
 19. The method of claim 18wherein: said step opening a plurality of isolation trenches furthercomprising a step of opening isolation trenches immediately next to saidZener diode for isolating said Zener diode for preventing said latch-upbetween said doped regions of different conductivity types.
 20. Themethod of claim 16 further comprising: depositing a metal layer on abottom surface of said substrate to function as an electrode for saidTVS array.
 21. The method of claim 16 further comprising: depositing ametal layer on a to surface of said substrate and patterning said metallayer to function as input-output contact pads and as an electrode forsaid TVS array of an opposite conductivity from an electrode formed onsaid bottom surface of said semiconductor substrate.